VE2045C-E3 www.vishay.com vishay general semiconductor revision: 20-dec-13 1 document number: 89980 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual low-voltage trench mo s barrier schottky rectifier ultra low v f = 0.42 v at i f = 5 a features ? power pack ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? solder dip 275 c max. 10 s, per jesd 22-b106 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in low voltage, high frequency rectifier of switching power supplies, freewheeling diodes, dc/dc converters, and polarity protec tion application. mechanical data case: to-220ab ? molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs-co mpliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? e3 suffix meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 5 ms primary characteristics i f(av) 2 x 10 a v rrm 45 v i fsm 100 a v f at i f = 10 a (t a = 125 c) 0.54 v t j max. 150 c package to-220ab diode variations common cathode tmbs ? ca s e pin 2 pin 1 pin 3 to-220ab 1 2 1 2 3 ve2045c maximum ratings (t a = 25 c unless otherwise noted) parameter symbol VE2045C-E3 unit maximum repetitive pe ak reverse voltage v rrm 45 v maximum average forward rectified current (fig. 1) per device i f(av) 20 a per diode 10 peak forward surge current 8. 3 ms single ha lf sine-wave ? superimposed on ra ted load per diode i fsm 100 a operating junction and storage temperature range t j , t stg -40 to +150 c electrical characteristics (t a = 25 c unless otherwise noted) parameter test condit ions symbol typ. max. unit instantaneous forward voltage ? per diode i f = 5 a t a = 25 c v f (1) 0.50 - v i f = 10 a 0.60 0.70 i f = 5 a t a = 125 c 0.42 - i f = 10 a 0.54 0.63 reverse current per diode v r = 45 v t a = 25 c i r (2) - 500 a t a = 125 c 3 15 ma
VE2045C-E3 www.vishay.com vishay general semiconductor revision: 20-dec-13 2 document number: 89980 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) the heat generated must be less than the th ermal conductivity from junction-to-ambient: ? p d / ? t j < 1 r ? ja (2) free air, without heatsink ? ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power loss characteristics per diode fig. 3 - typical instantaneous forward characteristics per diode fig. 4 - typical reverse characteristics per diode thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol VE2045C-E3 unit typical thermal resistance per diode r ? jc 3.5 c/w per device 2.2 per device r ? ja (1)(2) 55 ordering information (example) package preferred p/n unit weight (g) pac kage code base quantity delivery mode to-220ab VE2045C-E3/45 1.93 45 50/tube tube 0 2 4 6 8 10 12 14 16 18 20 22 0 25 50 75 100 125 150 average forward rectified current (a) ca s e temperature (c) r ja = r jc = 2.2 o c/w t a = 25 o c, r ja = 55 o c/w 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8 9 10 11 12 average power lo ss (w) average forward current (a) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 1.0 d = 0.8 d = t p /t t t p 0.1 1 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 in s tantaneou s forward current (a) in s tantaneou s forward voltage (v) t a = 150 c t a = 25 c t a = 100 c t a = 125 c 0.001 0.01 0.1 1 10 100 20 40 60 80 100 in s tantaneou s rever s e current (ma) percent of rated peak rever s e voltage (%) t a = 150 c t a = 125 c t a = 100 c t a = 25 c
VE2045C-E3 www.vishay.com vishay general semiconductor revision: 20-dec-13 3 document number: 89980 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical junction capacitance per diode fig. 6 - typical transient thermal impedance per diode package outline dimensions in inches (millimeters) 10 100 1000 10 000 0.1 1 10 100 junction capacitance (pf) rever s e voltage (v) t j = 25 c f = 1.0 mhz v s ig = 50 mv p -p 0.1 1 10 0.01 0.1 1 10 100 tran s ient thermal impedance (c/w) t - pul s e duration ( s ) junction to ca s e to-220ab 0.415 (10.54) max. 0.159 (4.04) dia. 0.143 (3.64) dia. 0.260 (6.6) 0.236 (6.0) 0.160 (4.06) 0.140 (3.56) 0.060 (1.50) 0.047 (1.20) 0.10 (2.54) 1 3 0.113 (2.87) 0.103 (2.62) 0.040 (0.84) 0.024 (0.62) 0.560 (14.22) 0.530 (13.46) 0.603 (15.32) 0.573 (14.55) 0.055 (1.39) 0.045 (1.14) 0.185 (4.70) 0.175 (4.44) 0.022 (0.56) 0.014 (0.36) 2 pin 1 pin 3 pin 2 0.10 (2.54)
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